In order to measure the plasma temperature and density in the spherical tokamak ETE, a one-channel Thomson scattering system was implemented. During the upgrade of capacitor banks and optimization since the beginning of operation, the plasma pulse duration has increased from 1.5 ms up to 12 ms with plasma currents varying from 10 kA to 60 kA. During this phase, the electron temperature was increased from 20 eV to 160 eV with densities as high as 3.5×10(19) m-3. Presently, the Thomson scattering diagnostic is being upgraded based on the time-delay technique, that consists in usingfi bers of different lengths to transmit the scattered light signals to the same polychromator. This system will allow measurements of electron temperature and density profi les with ten spatial points per laser shot and per polychromator. This work describes in details the Thomson scattering system, presents a selection of results obtained by this system since the initial phase of operation, and shows details of the proposed upgrade of the Thomson scattering system.

The application of a new multichannel 64 parallel amplification 10 stage photomultiplier arranged in 8 x 8 matrix of 20.32 mm x 20.32 mm, detector XP1752 from Philips, for laser light scattering diagnostics is now under development. Signal intensity calibration curve for eight parallel and individual channels, as well as cross talk between channels was measured. Also, Rayleigh scattering on nitrogen gas, normally used as optical calibration method for electron density measurements in Thomson scattering was realized, and the intensity of both detectors was compared making measurements with a tungsten lamp.

In the present study we use x-ray diffraction methods to characterize the surface of Si wafers irradiated with nitrogen by Plasma Immersion Ion Implantation. This is a non-line-of-sight ion implantation method, which allows three-dimensional treatment of materials including semiconductors, metals and dielectrics. The atomic concentration profiles in the implanted Si wafers were measured by Auger electron spectroscopy. The (004) Si rocking curve ( omega-scan) was measured in a high resolution x-ray diffractometer equipped with a Ge (220) four-crystal monochromator before and after implantation. A distortion of the Si (004)-rocking curve was clearly observed for the as-implanted sample. This rocking curve was successfully simulated by dynamical theory of x-ray diffraction, assuming a Gaussian strain profile through the implanted region. The analysis made by x-ray difraction and Auger electron spectroscopy revealed successful implantation of ions with ac- cumulated nitrogen dose of 1.5 x <FONT FACE=Symbol>10(17) </FONT>cm-3 .The Si wafers can be used as high sensitivity monitors in the Plasma Immersion Ion Implantation process, especially at the low dose range.

Ideal one dimensional MHD (non-resistive) equations are used to study the rotational instability in field reversed configuration plasmas. Instead of using resistive boundary layer analysis, the eigenmode non hermitian equations are solved on the complex w-plane using a numerical code constructed using "Mathematica". We take into account the plasma compressibility and compare our results with the Compact Torus (TC-1) experiment of the Universidade Estadual de Campinas (UNICAMP), which is presented here. The m = 4 rotational mode observed in TC-1 is used to verify the consistency of our model.